ATP101 no. a1646-1/4 specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. features ? low on-resistance. ? large current. ? slim package. ? 4.5v drive. ? halogen free compliance. speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss --30 v gate-to-source voltage v gss 20 v drain current (dc) i d --25 a drain current (pw 10 s) i dp pw 10 s, duty cycle 1% --75 a allowable power dissipation p d tc=25 c30w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 25 mj avalanche current *2 i av --13 a note : * 1 v dd = -- 10v, l=200 h, i av = -- 13a * 2 l 200 h, single pulse electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --30 v zero-gate voltage drain current i dss v ds =--30v, v gs =0v --1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a marking : ATP101 continued on next page. ordering number : ena1646 12710pa tk im tc-00002233 sanyo semiconductors data sheet ATP101 p-channel silicon mosfet general-purpose switching device applications www.semiconductor-sanyo.com/network
ATP101 no. a1646-2/4 continued from preceding page. parameter symbol conditions ratings unit min typ max cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.6 v forward transfer admittance | yfs | v ds =--10v, i d =--13a 17 s static drain-to-source on-state resistance r ds (on)1 i d =--13a, v gs =--10v 23 30 m r ds (on)2 i d =--7a, v gs =--4.5v 36 51 m input capacitance ciss v ds =--10v, f=1mhz 875 pf output capacitance coss v ds =--10v, f=1mhz 220 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 155 pf turn-on delay time t d (on) see speci ed test circuit. 9.2 ns rise time t r see speci ed test circuit. 70 ns turn-off delay time t d (off) see speci ed test circuit. 80 ns fall time t f see speci ed test circuit. 70 ns total gate charge qg v ds =--15v, v gs =--10v, i d =--25a 18.5 nc gate-to-source charge qgs v ds =--15v, v gs =--10v, i d =--25a 3.2 nc gate-to-drain ?miller? charge qgd v ds =--15v, v gs =--10v, i d =--25a 4.0 nc diode forward voltage v sd i s =--25a, v gs =0v --0.99 --1.5 v package dimensions unit : mm (typ) 7057-001 switching time test circuit 1 : gate 2 : drain 3 : source 4 : drain sanyo : atpa k 0.7 0.4 0.55 9.5 7.3 0.5 1.7 4.6 6.05 13 2 6.5 0.6 4 0.8 0.5 1.5 0.4 2.6 4.6 0.4 0.1 2.3 2.3 pw=10 s d.c. 1% p. g 50 g s d i d = --13a r l =1.15 v dd = --15v v out v in 0v --10v v in ATP101
ATP101 no. a1646-3/4 | y fs | -- i d r ds (on) -- v gs r ds (on) -- tc i d -- v ds i d -- v gs sw time -- i d drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a gate-to-source voltage, v gs -- v case temperature, tc -- c static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m drain current, i d -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v source current, i s -- a forward transfer admittance, | y fs | -- s ciss, coss, crss -- v ds i s -- v sd it15315 it15312 --60 --40 --20 160 0 --30 --10 --15 --20 --25 -- 5 1000 100 2 2 it15319 it15317 it15316 --0.1 --1.0 23 57 3 --1.2 --1.4 --1.0 --0.6 --0.4 --0.8 --0.2 --0.001 --0.01 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 --0.1 --1.0 --10 5 5 7 2 10 1.0 5 7 3 2 2 --10 357 57 23 --0.1 --1.0 23 57 2 --10 357 57 23 0 20 40 60 80 100 120 140 3 3 5 7 7 75 c 25 c tc= --25 c --25 c tc=75 c tc= --25 c 25 c 75 c tc=75 c 25 c --25 c ciss crss it15318 10 100 2 3 5 3 7 5 7 2 t d (off) v dd = --15v v gs = --10v f=1mhz t r --0.5 --1.0 --2.0 --1.5 0 0 -- 5 --25 --15 --20 --10 0 -- 5 --10 --30 --25 --20 --15 0 it15314 -- 2 -- 1 -- 4 -- 3 -- 6 --5 --8 --9 --7 --10 --11 --16 --12 --14 --15 --13 0 80 30 60 50 40 70 10 20 10 80 60 50 30 20 40 70 it15313 --0.5 --1.5 --2.0 --1.0 --2.5 --4.5 --4.0 --5.0 --3.5 --3.0 0 tc=25 c --4.0v v gs = --3.5v --16.0v t f 25 c v gs = --4.5v, i d = --7a v gs = --10v, i d = --13a --8.0v coss t d (on) --4.5v --6.0v --10.0v i d = --7a --13a v ds = --10v v ds = --10v single pulse tc=25 c single pulse single pulse v gs =0v single pulse
ATP101 no. a1646-4/4 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. ps this catalog provides information as of january, 2010. speci cations and information herein are subject to change without notice. note on usage : since the ATP101 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v e as -- ta avalanche energy derating factor -- % ambient temperature, ta -- c 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 it10478 a s o drain-to-source voltage, v ds -- v drain current, i d -- a p d -- tc allowable power dissipation, p d -- w case temperature, tc -- c it15320 048 26 14 12 18 16 10 20 0 -- 2 -- 4 -- 6 -- 1 -- 3 -- 5 -- 8 -- 7 -- 9 --10 it15322 0 0 20 40 60 80 100 140 120 25 30 15 20 5 10 35 160 i dp = --75a i d = --25a 1ms 10ms 100ms dc operation operation in this area is limited by r ds (on). 100 s 10 s it15321 --0.1 --1.0 2 3 5 7 2 3 5 7 2 3 5 2 7 --10 --0.1 --1.0 23 57 2 --10 357 235 --100 v ds = --15v i d = --25a pw 10 s tc=25 c single pulse
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